| 摘要 |
PURPOSE:To ensure an alignment margin without inhibiting improvement in the degree of integration as much as possible by forming the side edge, in the direction of a line connecting the centers of both contact sections in an active region, not in parallel with a line connecting the centers and equalizing alignment allowance to the active region in the lower section of a capacitor contact for any side of the active region. CONSTITUTION:Side edges L1, L2 in the direction along a line L tying each center of a bit-line contact section CH1 and a capacitor contact section CH2 in an active region AA are formed in a non-parallel shape to the line L. The active region AA is inclined in the bit-line direction (the horizontal direction), and the capacitor contact section CH2 has an extension section AA1 in the symmetric direction to the bit-line contact section CH1 while using a line in the orthogonal direction (the vertical direction) to a bit-line as an axis. CH3 represents a capacitor contact section to the shared active region AA of an adjacent cell, and the same extension section AA2 is also formed to the section. In the constitution, all of allowance to the active-region side edges L1-L4 of the capacitor contact section CH2 can be equalized. |
