| 摘要 |
PURPOSE:To enable ohmic contact of a semiconductor film through shared contact with a gate electrode or a wiring and a semiconductor region by bringing a second semiconductor film of the same conductivity type as that of the semiconductor region into contact with a conductor film and the semiconductor region which contain at least metal and constitute the gate electrode or the wiring. CONSTITUTION:A field SiO2 film 2 is selectively formed on a surface of an n-type Si substrate 1, element isolation is carried out and an n<+>-type channel stop region is formed thereunder. A gate SiO2 film 3 is formed on a surface of an active region which is enclosed by the field SiO2 film 2. A gate electrode G is formed of an n<+>-type polycrystalline Si film 4 of a first semiconductor film, a TiN film 5 for impurity diffusion prevention and a WSix film 6. A p<+>-type polycrystalline Si film 10 is brought into contact with the gate electrode G and a p<+>-type semiconductor region 8 formed in the n-type Si substrate 1. |
