发明名称 SEMICONDUCTOR MEMORY DEVICE
摘要 PURPOSE:To shorten initial amplification time for the whole sense amplifiers and access time by providing a switching means, and connecting electrically a transistor for pull-down of each sense amplifier to a part in the neighborhood of a charge extraction line based on a driving signal. CONSTITUTION:When the driving signal is inputted, the transistor NT for pull- down of each of the sense amplifiers SAO-SAn is connected electrically to the part in the neighborhood of each sense amplifier of the charge extraction line SAN# set at ground potential by the switching means Q0-Qn. In such a case, the operation of the sense amplifier being separated from the ground is started delaying the delay time of a line supplying the driving signal to the switching means The delay time of the line can be easily reduced by setting the switching means with low load capacity, and each sense amplifier can start initial amplification in a short period after the driving signal is inputted. Therefore, it is possible to shorten the initial amplification time for the whole sense amplifiers and the access time.
申请公布号 JPH03269896(A) 申请公布日期 1991.12.02
申请号 JP19900069214 申请日期 1990.03.19
申请人 SHARP CORP 发明人 KUBOTA YASUSHI
分类号 G11C11/409;G11C11/401;H01L21/8242;H01L27/10;H01L27/108 主分类号 G11C11/409
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