| 摘要 |
PURPOSE:To relax a stress caused when a Cu ball is thermocompressionbonded, to prevent the surface of a semiconductor chip and a diffusion junction part from being damaged and to prevent an interlayer film from being cracked by a method wherein the interlayer film having a contact hole is formed on a first Al film inside a bonding area. CONSTITUTION:An emitter diffusion layer 3 included in a base diffusion layer 2 is formed inside a substrate 1 for a semiconductor chip. An interlayer film 6 composed of an SiO2 film as a thermal oxide film, in 5000Angstrom , having contact holes 5 whose diameter at 20mum is smaller than a ball diameter of, e.g. 60mum is formed in a bonding area on the surface of the emitter diffusion layer 3, an Al thin film 4 to be used as an emitter electrode is formed on it by a vapor deposition operation. The emitter diffusion layer 3 is connected electrically via the contact holes 5 in the interlayer film 6. A stress caused when a Cu ball is compression-bonded onto the Al thin film 4 to be used as the emitter electrode by said structure is relaxed by the interlayer film 6. |
