| 摘要 |
PURPOSE:To facilitate manufacture by providing a field oxide film in the width direction of a MOS transistor channel so that bird's beaks may extend to a position where a channel width is the dimension of a quantum fine wire to constitute a quantum fine wire. CONSTITUTION:A p-type silicon substrate 41 comprises a MOS transistor having a gate insulating film 43, a gate 45, a source 47, and a drain 49, and further a field oxide film 51 which defines the active region and whose bird's beaks 51a extend to a position where the width Wo transistor channel 53 is the dimension of a quantum fine wire. A variety of data on how the length of a bird's beak varies upon changes in conditions of field oxidation are stored; therefore, it is easy to adjust the length of a bird's beak to a desired dimension. This design can provide quantum fine wire transistors in such a structure that manufacture is facilitated. |
