| 摘要 |
PURPOSE:To obtain the subject element having a deposited film resistant to dielectric breakage, having smooth surface and high heat-resistance and exhibiting high luminance by using a hole-injection and transport layer consisting of a specific tetramethyl-bis(4-di-p-tolylaminophenyl)-p-xylene. CONSTITUTION:The objective element has a hole-injection and transport layer consisting of alpha,alpha,alpha',alpha'-tetramethyl-alpha,alpha'-bis(4-di-p-tolylami nophenyl)-p-xylene of formula and has a film thickness of <=1mum (preferably 0.03-0.1mum) even in the case of forming the element with single layer or by lamination. |
