| 摘要 |
PURPOSE:To prevent the lowering of accuracy in alignment due to nonuniformity of thickness and surface configuration of a resist layer on the optical marking of alignment and in its vicinity by a method wherein two barriers, which are protruding from the surface of a substrate and opposingly positioned on both sides of a marking, are formed. CONSTITUTION:An optional mark 30 for alignment is formed on the prescribed region on the surface of a semiconductor device substrate 1, and at the same time, a pair of barriers 10 are formed opposing with each other on both sides of the mark 30. Subsequently, a photoresist 4 is applied. To be more precise, as the gap between the mark 30 and a barrier 10 is filled up with photoresist, the end part of the mark 30 is coated with a flat photoresist layer 4 having a flat upper surface. Accordingly, no lens working by the photoresist on the end part of the mark 30 is generated, and also the interference condition of a light beam 5 is not changed by the position of scanning. As a result, the deviation between the end part of the mark 30 and the peak position of the changing rate of reflected light intensity can also be eliminated. |
