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发明名称
ANNEALING PROCESS OF SEMICONDUCTOR SUBSTRATE
摘要
申请公布号
JPH03266424(A)
申请公布日期
1991.11.27
申请号
JP19900064031
申请日期
1990.03.16
申请人
SONY CORP
发明人
HASHIGUCHI TOSHIYA
分类号
H01L21/268;H01L21/26;H01L21/265
主分类号
H01L21/268
代理机构
代理人
主权项
地址
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