| 摘要 |
<p>This invention relates to a method of manufacturing a semiconductor memory device having stacked capacitor cells. Bit lines (7) of the stacked capacitor cells are filled in grooves (3) formed in the main surface area of a substrate (1) and the bit line (7) has an area which is exposed from the groove (3). An insulation film (8) is formed on the area. In this invention, the insulation film (8) is formed in the following manner. First, a nitride film (5) is formed on the main surface of the substrate (1) and the side and bottom surfaces of each of the grooves (3). Then, the internal portion of the groove (3) is filled with a conductive film (7) to form a bit line. After this, the surface portion of the bit line is oxidized with the nitride film (5) used as a mask. The insulation film (8) can be formed by this oxidation. <IMAGE></p> |
