发明名称 Semicustom-made semiconductor integrated circuit having interface circuit selectively coupled to different voltage source
摘要 A semicustom-made semiconductor integrated circuit is fabricated on a single semiconductor chip, and comprises a first high level line, a first low level line, a first interface circuit coupled between the first high level line and the first low level line, a second high level line, a second low level line, a second interface circuit coupled between the second high level line and the second low level line, interconnections for alternatively coupling the first low level line to the second high level line and the first high and low level lines with the second high and low level lines, respectively, depending upon a user's request, and a dual power supply system or a single power supply system coupled to the first high and low level lines and said second high and low level lines, whereby the second interface circuit operates on either first or second voltage range.
申请公布号 US5067003(A) 申请公布日期 1991.11.19
申请号 US19900584910 申请日期 1990.09.19
申请人 NEC CORPORATION 发明人 OKAMURA, HITOSHI
分类号 H01L27/118;H01L21/82;H01L23/528 主分类号 H01L27/118
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