发明名称 FORMATION OF FINE PATTERN
摘要 PURPOSE:To make improvement in the contrast of an optical image at the time of exposing of a lower layer by providing phase shifter materials in the wall parts on both sides of the upper layer resist patterns of a PCM (portable conformable mask) resist and exposing a lower layer resist with the upper layer resist patterns and the phase shifter materials as a mask. CONSTITUTION:The phase shifter materials 9 are provided in the wall parts on both sides of the upper layer resist patterns 1 of the PCM (portable conformable mask) resist and the lower layer resist 2 is exposed by irradiation over the entire surface. Namely, the lower layer resist 2 is exposed with the upper layer resist patterns 1 and the upper layer side walls 11 as the mask. The light passing the side wall parts 11 in the upper layer formed of the shifter material is, therefore, inverted in phase by 180 deg. with the light passing the upper layer resist pattern parts 1. The improved contrast of the optical image when the lower layer resist is exposed is obtd. in this way.
申请公布号 JPH03259257(A) 申请公布日期 1991.11.19
申请号 JP19900058833 申请日期 1990.03.09
申请人 MITSUBISHI ELECTRIC CORP 发明人 KAWAI AKIRA
分类号 G03F1/29;G03F1/30;G03F1/68;G03F1/70;G03F1/80;G03F7/26;H01L21/027 主分类号 G03F1/29
代理机构 代理人
主权项
地址
您可能感兴趣的专利