| 摘要 |
PURPOSE:To produce a highly effective semiconductor light emitting element with good reproducibly and reliability by activating reactive gas in a manufacture method of a semiconductor light emitting element which is composed of II-VI chemical semiconductor and by irradiating a unidirectional ion beam to dry etch a rib-like resonator. CONSTITUTION:A lower clad layer 202, an active layer 203 and an upper clad layer 204 are laminated one by one on a substrate 201. After a contact electrode 205 is formed, resist, etc., is applied to the lamination structure side, and an etching mask 206 is formed by photolithography technique making a part for resonator formation remain. Selective etching is performed for the contact electrode 205 and the upper clad layer 204 using reactive ion beam etching method (RIBE method) using the etching mask 206 to leave a masked rib-like resonator section. Since the ions are beam-like, etching can be realized faithfully to a mask shape when the ions are irradiated from a vertical direction to the etching mask. Use of reactive gas enables etching at a lower energy than plasma etching using inert gas. |
