| 摘要 |
<p>PURPOSE:To avoid the damage of a silicon nitride film for improving a productive efficiency by doing away with the overlapping of an aluminum interconnection and the silicon nitride film at a wire-bonding section around an opening of the silicon nitride film. CONSTITUTION:A silicon oxide film 2 and an aluminum interconnection 3 which is formed on the surface of the silicon oxide film 2 on a silicon substrate 1 are covered with a silicon nitride film 4. Then, photo resist 5 is formed in the thickness of about 1.0mum and is heat-treated to protect the substrate 1 from light. After that, photo resist 6 is formed in the thickness of about 1.0mum to make an area wider than a wire-bonding metal interconnection section by the photolithography. Nextly, the photo resist and the silicon nitride film are removed by etching at the same etching ratio until the surface of the aluminum interconnection 3 at the wire-bonding section is exposed. Lastly, the remaining photo resist is removed by a normal method to obtain a desired semiconductor device.</p> |
