| 摘要 |
<p>A method for use in manufacturing an integrated circuit in an element of gallium or other III-V semiconductor material, comprises forming a volume holographic image on a recording medium (21) by interference between an object beam (OB) of coherent light passed through a mask (22) and a reference beam (RB1) of coherent light which is totally internally reflected at a surface on which the recording medium is disposed, then replacing the mask by an element (26) of the semiconductor material which has a photosensitive coating using a second reference beam (RB2) replayed in the opposite direction from the first reference beam (RB1).</p> |
