| 摘要 |
PURPOSE:To unnecessitate the use of high frequency power, and to prevent a semiconductor substrate from suffering damage by a method wherein the photoresist formed on the semiconductor substrate is removed by exposing it to ozone gas while the substrate is being heated. CONSTITUTION:A film, which requires selective etching, such as an oxide film 2, for example, is coated on the surface of a semiconductor substrate such as a silicon wafer 1, for example, and after a photoresist 3 has been formed on the oxide film, a patterning operation is conducted thereon. Then, the unnecessitated photoresist 3 is brought into a treatment chamber, the photoresist is exposed to ozone, it is incinerated and removed. Pertaining to the condition of treatment at this time, the pressure of ozone gas is normal pressure, the treatment temperature is normal temperature and the time of treatment is one hour. The silicon wafer 1 is heated up to 150 to 180 deg.C by a heater 4. The photoresist 3 is reacted with ozone gas, and it is removed by incineration. |
