发明名称 Silicon backside etch for semiconductors
摘要 A technique for analyzing defective semiconductor chips is disclosed. The silicon substrate of the chip is etched away, leaving the memory cells exposed for viewing. The method includes the steps of: removing oxide from the backside of a semiconductor device; and, placing the semiconductor device into a solution of choline and water. The solution etches away the substrate. The memory cells may be photographed and viewed by TEM and SEM techniques.
申请公布号 US5064498(A) 申请公布日期 1991.11.12
申请号 US19900570933 申请日期 1990.08.21
申请人 TEXAS INSTRUMENTS INCORPORATED 发明人 MILLER, PATRICK E.
分类号 G01R31/302;H01L21/306 主分类号 G01R31/302
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