| 摘要 |
Current blocking layers are provided on whole both side surfaces of a mesa stripe structure to control a transverse mode of light in active and window sections. In a longitudinal direction of a laser cavity, an active layer and optical guiding layers are coupled by taper like optical waveguides. As a result, a low loss coupling and a high optical radiation power are obtained in a self-alignment type window semiconductor laser according to the invention. Further, a wafer surface is flatted, after the regrowth of the window sections, so that the window sections and an active section are simultaneously processed in regard to an optical transverse mode. As a result, a fabricating process is simplified in the invention.
|
