| 摘要 |
PURPOSE:To easily manufacture a MIS type light emitting diode by removing an SiO2 layer and an SAl2O3 layer formed directly on a photoresist layer, forming a window at a semiconductor etched part, and dry etching it with the remaining SiO2 layer and the Al2O3 layer as masks to remove the masks. CONSTITUTION:A photoresist layer 13 is formed on a part (window) to be etched on an I-type layer 5, an SiO2 layer 11, an Al2O3 layer 12 are formed uniformly on the layers 13, 5, dipped in photoresist peeling solution to remove the layers 11, 22 directly on the layer 12 together with the layer 13 to form the layers 11, 12 in which windows A are opened. Then, after the upper parts of the layer 5 of the part (window) not covered with the layers 11, 12 and the layer 4 thereunder and the layer 3 are etched, they are then dry etched. Thereafter, the layer 11 remaining on the layer 5 is removed by the use of hydrofluoric acid. |
