| 摘要 |
PURPOSE:To provide an efficient semiconductor device having a microminiature structure with increased effective capacitor, by using a structure wherein the conductor layer for the charge storage layer of a capacitor is made of a metal, its alloy, or an electrode material that has a low resistivity equivalent to that of the metal or alloy. CONSTITUTION:A cylindrical capacitor has a charge storage layer 15, which is composed of a low-resistivity metal such as W, Mo, Ti, Cu, Ni or Ta, or of an alloy of such a metal and polysilicon. A conductor film 17 for a counter electrode is formed of polysilicon, metal, or alloy. A dielectric film 16 is formed between the charge storage layer 15 and the conductor film 17. The dielectric film is formed of one or more thin layers of silicon nitride or some other material that has a permeability greater than or equal to that of silicon nitride. |
