Process for fabricating low defect polysilicon.

摘要

A method of removing natural oxides and other contaminants on silicon or polysilicon and then depositing polysilicon thereon. The natural oxide is substantially removed from the exposed silicon with an anhydrous etchant and then the polysilicon is deposited on the exposed silicon. The etching and depositing steps occur in the same reactor chamber (in-situ). A portion of the end of the selective etching step overlaps with a portion of the beginning of the polysilicon deposition step to achieve an interface between the underlying silicon and the deposited polysilicon that is substantially free of native oxides and other contaminants.