| 摘要 |
<p>According to this invention, there is disclosed a semiconductor device in which a memory section and a logic section are arranged on the same semiconductor chip, comprising a high-resistance element (R1, R2, ..., Rn) constituting a memory cell (M1, M2, ..., Mn), a low-resistance line (L) connected to the high-resistance element (R1, R2, ..., Rn), a power source line (Lv1) serving as a power source path from a power source pad, a switching element (Sw) arranged between the low-resistance line (L) and the power source line (Lv1), and a control circuit for controlling the switching element (Sw). <IMAGE></p> |
