发明名称 Semiconductor device assembly.
摘要 A pair of DRAM chips 1A and 1B are mounted opposedly to each other with wiring means such as lead frames put therebetween, the lead frames being substantially integral with external terminals 3B. Then, these DRAM chips and lead frames are connected together by the conventional wire bonding method. Plural pairs of the thus-connected DRAM chips and lead frames are stacked and corresponding leads of the lead frames are connected in common to form a laminate. The plural DRAM chips thus mounted are activated selectively in accordance with a predetermined chip selection signal. Additionally, partial DRAM chips capable of partially functioning normally are combined together by utilizing the above chip mounting method to constitute a single DRAM package.
申请公布号 EP0454447(A2) 申请公布日期 1991.10.30
申请号 EP19910303709 申请日期 1991.04.24
申请人 HITACHI, LTD. 发明人 OGUCHI, SATOSHI;ISHIHARA, MASAMICHI;ITO, KAZUYA;MURAKAMI, GEN;ANJO, ICHIRO;SAKUTA, TOSHIYUKI;YAMAGUCHI, YASUNORI;KASAMA, YASUHIRO;UDAGAWA, TETSU;MIYAMOTO, EIJI;MATSUNO, YOUICHI;SATOH, HIROSHI;NOZOE, ATSUSI
分类号 G11C5/00;H01L23/495;H01L25/065 主分类号 G11C5/00
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