MOS type input circuit.

摘要

The source-drain paths of p-channel first and second MOSFETs (11, 12) are connected in series between a node, to which a high-potential power source voltage (Vcc) is supplied, and a signal output node (Out). The source-drain paths of n-channel third and fourth MOSFETs (13, 14) are connected in series between the signal output node (Out) and a node to which a low-potential power source voltage (Vss) is supplied. A signal from an input node (In) is supplied to the gates of said four MOSFETs in a parallel manner. The source-drain path of an n-channel fifth MOSFET (15) is connected in parallel to the source-drain path of the second MOSFET which is not directly connected to the node of the high-potential power source voltage (Vcc). The gate of the fifth MOSFET (15) is connected to the node of the high-potential power source voltage (Vcc). The source-drain path of a p-channel sixth MOSFET (16) is connected in parallel to the source-drain path of the third MOSFET which is not directly connected to the node of the low-potential power source voltage (Vss). The gate of the sixth MOSFET (16) is connected to the node of the low-potential power source voltage (Vss). <IMAGE>