| 摘要 |
<p>PURPOSE:To shorten accessing time by operating a first diffused region so provided that an end is superposed under a floating gate at the time of writing and a second diffused region so provided that an end is isolated from the gate as a source, a drain, and operating them as the source, the drain at the time of reading. CONSTITUTION:A memory cell formed of an FAMOS transistor having a floating gate 3 provided on an oxide film 2 covering a semiconductor substrate 1, a first diffused region 5 so provided on the substrate at both sides of the gate 3 that its end is superposed under the gate 3 and a second diffused region 4 so provided that its end is isolated from the gate 3, and a bit line selector for selecting a bit line connected to the region 5 and a bit line connected to the region 4 are provided. The regions 5, 4 are respectively operated as a drain, a source at the time of writing, and the regions 5, 4 are respectively operated as the source, the drain at the time of reading. Thus, accessing time as a whole memory can be shortened.</p> |
