| 摘要 |
A superlattice structure comprising a host quantum well with a plurality of mini quantum wells formed therein is provided. The host quantum well has a confined energy state E2 which lies very near a lower band energy V1 of the host well, while each of the mini quantum wells has a single confined energy level E1 which lies below V1. Charge carriers are provided to the quantum well by doping material in the barrier layers to provide modulation doping of the quantum well. The mini quantum wells contain at least one monolayer of another material within their boundaries. The monolayer material is preferably electrically inactive and is a source of phonons which are generated for the purpose of charge carrier-phonon coupling in order to cause charge carrier pairing. In a preferred embodiment a transfer quantum well is formed between the barrier region of the host quantum well and the outermost mini quantum wells. The transfer quantum well has an energy state which couples to the E1 energy state of the mini quantum wells and serves to transfer charge to the mini quantum wells.
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