| 摘要 |
PURPOSE:To easily form the chemically stable thin film of boron carbide excellent in hardness at the time of forming a thin film of high-hardness boron carbide on a substrate by plasma CVD by impressing a negative bias voltage on the substrate. CONSTITUTION:A holder 4 provided with a heater 7 is arranged in the reaction chamber 2 of a diode parallel plates plasma CVD system 1 in parallel with the lower electrode plate 5, and a substrate 3 of Si, Mo, W, quartz, alumina, etc., is mounted on the holder 4. A mixture 9 of a boron-contg. raw gas such as B2H8, BCl3 and BBr3, a carbon-contg. raw gas such as CH4 and C2H6 and gaseous H2 is supplied into the chamber 2, the substrate 3 is heated by the heater 7 to 100-1200 deg.C, for example, and a plasma discharge is generated between the holder 4 and the electrode plate 5 by a high-frequency power source 8. A negative bias voltage is impressed on the holder 4 in this case by a power source 6, and a high-hardness boron carbide thin film as a chemically stable sliding protective film is formed on the substrate 3 by plasma CVD. |
