METHOD OF MANUFACTURING NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE,申请号EP19910104329-传众专利搜索

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发明名称	METHOD OF MANUFACTURING NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE
摘要
申请公布号	EP0450401(A3)	申请公布日期	1991.10.23
申请号	EP19910104329	申请日期	1991.03.20
申请人	KABUSHIKI KAISHA TOSHIBA	发明人	YAMADA, SEIJI, C/O INTELLECT. PROP. DIVISION;NARUKE, KIYOMI, C/O INTELLECT. PROP. DIVISION
分类号	H01L21/8247;H01L21/28;H01L29/788;H01L29/792;(IPC1-7):H01L21/336;H01L21/334;H01L21/82	主分类号	H01L21/8247
代理机构		代理人
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