发明名称 Semiconductor device having a structure for accelerating carriers.
摘要 <p>A semiconductor device comprises a channel (12) of a semiconductor material for passing carriers, a carrier injecting part (16) for injecting the carriers into the channel and establishing an ohmic contact with the channel at a first location, a carrier collecting part (18) for collecting the carriers from the channel, the carrier collecting part establishing an ohmic contact with the channel at a second, different location, a carrier control part (14) provided on the channel at a third location located between the first and second locations, the carrier control part being applied with a control voltage and controlling the passage of the carriers through the channel from the carrier injecting means to the carrier collecting means in response to the control voltage, and an acceleration part (22, 24) provided between the first and third locations including the third location. The acceleration part is supplied with an acceleration voltage and producing an electric field that accelerates the carriers such that the electric field has a magnitude generally proportional to the acceleration voltage applied thereto. &lt;IMAGE&gt;</p>
申请公布号 EP0452910(A2) 申请公布日期 1991.10.23
申请号 EP19910106161 申请日期 1991.04.17
申请人 FUJITSU LIMITED 发明人 AWANO, YUJI
分类号 H01L29/15;H01L29/76;H01L29/812 主分类号 H01L29/15
代理机构 代理人
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