| 摘要 |
PURPOSE:To manufacture the title solar batteries of high efficiency by a method wherein the silicon solar batteries are heteroepitaxially deposited on III-V group compound semiconductor solar batteries. CONSTITUTION:An Al As layer 11, an n<+>GaAs layer 10, an n<+>A GaAs layer 9, an n-AlGaAs layer 8, p-A GaAs layer 7, an n<+>AlGaAs layer 6, an n-AlGaAs layer 5, an n-GaAs layer 4, a p<+>-GaAs layer 3 are deposited on a semiinsulating GaAs substrate 12 and after forming polysilicon to form a reticulated electrode on the formed epitaxial substrate 12, an n-silicon layer 2 and a p-silicon layer 1 are formed. Next, the Al As layer 11 is selectively etched away releasing the epitaxial layers from the substrate 12 to form electrodes 14-16 and a rear surface electrode 13. Through these procedures, silicon is deposited on the III-V group compound semiconductor substrate 12 so that the crystalline defects in crystals of compound semiconductor solar batteries may be diminished thereby enabling the solar batteries of high efficiency to be manufactured. |
