| 摘要 |
Positive resist consists of a photosensitive coating soln., treated with 0.001-1.0 (wt.) of a siloxane cpds. (I), contg. fluoroalkyl gps., of the formula: RF = X(CF2)m(CH2)p, C6F5, C6F5COCH2CH2 or C6F5CH2; X = F or H; m = 1-10; p = 1 or 2; R' = H or Me; Y = a linear, branched and/or cyclic 2-20 Si methylsiloxanyl gp. or a linear and/or branched 20-100 Si methyl-polysiloxanyl gp.. USE/ADVANTAGE - Addn. of (I) improves the film-forming property, i.e., a surface roughness less than 10nm is attached, making the photoresist esp. suitable for structurising microelectronic devices.
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| 申请人 |
FOTOCHEMISCHE WERKE GMBH, O-1170 BERLIN, DE |
发明人 |
PRESCHER, DIETRICH, DR., O-1193 BERLIN, DE;SEIBT, HORST, DR.;LEHMANN, LUKAS, O-1055 BERLIN, DE;BARNIKOW, JOACHIM, O-1170 BERLIN, DE;ENGELBRECHT, LOTHAR, DR., O-1130 BERLIN, DE;HAEHNEL, ELFRIEDE, O-1197 BERLIN, DE;LEHMS, INGEBURG, O-8010 DRESDEN, DE;PLATANOW, V. E., NOVOSIBIRSK, SU;BAUMBACH, WOLFGANG, O-1058 BERLIN, DE |
