发明名称 NONVOLATILE SEMICONDUCTOR STORAGE DEVICE CAPABLE OF ELECTRONIC ERASURE AND WRITE
摘要 <p>PURPOSE:To attain readout for a prescribed time at any time and to quicken the collation of data by disconnecting a cell for readout during the rewrite cycle from a write digit line and connecting the cell to a readout digit line. CONSTITUTION:The device is provided with a latch circuit 10 latching an output X0 of an X decoder, a level shift circuit 11 shifting a level of an output of the latch circuit 10, an N-channel MOS transistor (TR) (N-channel TR) 12 whose on/off is controlled by an output of the level shift circuit 11, an AND circuit 13 ANDing a readout signal RD and an output X0 of the X decoder, an inverter circuit 14 inverting the output of the latch circuit 10, and an AND circuit 15 ANDing an output of the inverter circuit and an output of the inverter circuit 14. Since the readout is attained at any time, the data verify time is reduced.</p>
申请公布号 JPH03232195(A) 申请公布日期 1991.10.16
申请号 JP19900027610 申请日期 1990.02.06
申请人 NEC CORP 发明人 TAKANO HIROSHI
分类号 G11C17/00;G11C16/02;G11C16/06 主分类号 G11C17/00
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