发明名称 Method of taper-etching with photoresist adhesion layer
摘要 In a two-step etching process for making tapered contact openings in a dieletric, a thin layer of a material is interposed to serve as an adhesive between the dielectric and a photoresist layer the thin layer of material is chosen to remain essentially intact during undercut partial etching of the dielectric. As a result of enhanced adhesion, the photoresist layer remains more accurately positioned for subsequent anisotropic etching across the remainder of the thickness of the dielectric.
申请公布号 US5057186(A) 申请公布日期 1991.10.15
申请号 US19900597295 申请日期 1990.10.12
申请人 AT&T BELL LABORATORIES 发明人 CHEW, HONGZONG;FIEBER, CATHERINE A.;HILLS, GRAHAM W.;MARTIN, JR., EDWARD P.
分类号 H01L21/311;H01L21/768 主分类号 H01L21/311
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