发明名称 |
Method of taper-etching with photoresist adhesion layer |
摘要 |
In a two-step etching process for making tapered contact openings in a dieletric, a thin layer of a material is interposed to serve as an adhesive between the dielectric and a photoresist layer the thin layer of material is chosen to remain essentially intact during undercut partial etching of the dielectric. As a result of enhanced adhesion, the photoresist layer remains more accurately positioned for subsequent anisotropic etching across the remainder of the thickness of the dielectric.
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申请公布号 |
US5057186(A) |
申请公布日期 |
1991.10.15 |
申请号 |
US19900597295 |
申请日期 |
1990.10.12 |
申请人 |
AT&T BELL LABORATORIES |
发明人 |
CHEW, HONGZONG;FIEBER, CATHERINE A.;HILLS, GRAHAM W.;MARTIN, JR., EDWARD P. |
分类号 |
H01L21/311;H01L21/768 |
主分类号 |
H01L21/311 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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