| 摘要 |
PURPOSE:To reduce a capacitance between a gate electrode and a drain electrode, to accelerate a switching speed and to reduce its loss by forming a conductive layer to form a Schottky junction with an epitaxial layer on the epitaxial layer of a first semiconductor layer having a first conductivity. CONSTITUTION:Since a fourth conductivity layer 31 is formed on an epitaxial layer 2 and a junction between the layers 2 and 31 is of a Schottky junction, a third depleted layer 23 extended vertically to the side of a semiconductor substrate 1 is formed in the layer 2 from the Schottky junction, and a fourth depleted layer 24 extended laterally to the lower part of a gate electrode 6 is formed. The layer 23 is not formed with an electrostatic capacitance between the electrode 6 and a drain electrode 10, but the layer 24 is formed with a capacitance between the electrodes 6 and 10, and has a larger thickness than that of a second deleted layer 22 as seen from a direction for connecting the electrode 6 to the electrode 10. Accordingly, the capacitance between the gate electrode and the drain electrode becomes remarkably small in value, is operated at a high speed, and its loss is small. |
