Method of manufacturing a charge-coupled image sensor arrangement, and image sensor arrangement obtained by this method.

摘要

In a method of manufacturing a raster transfer image sensor, the charge transport channels and the channel-bounding regions and the vertical anti-blooming channels are formed in a self-registering manner in that the channel-bounding regions are provided via a mask, and the intervening charge transport channels are provided in a maskless doping step. Since this doping is also carried out in the channel-bounding regions, a doping profile favourable for the photosensitivity is obtained in the channel-bounding regions with a maximum concentration at a distance from the surface. <IMAGE>