发明名称 EXPOSURE ALIGNMENT PROCESS
摘要 PURPOSE:To enable the specified alignment precision to be given per respective semiconductor chip when steppers in different exposure regions are used together by a method wherein, in order to expose using the second aligner, the alignment errors measured per the same exposure region as that of the first aligner are adjusted to be minimized in the whole exposure region of the second aligner and so forth. CONSTITUTION:In order to perform exposure using the second aligner in the exposure process using the first aligner (photo stepper) together with the second aligner (X ray stepper) having larger exposure region than that of the first aligner, the alignment errors per the same exposure region as that of the first aligner or per the integer times of the exposure region are measured and adjusted to be minimized in the whole exposure region of the second aligner. Furthermore, when the alignment errors can not be adjusted to be less than the specified value in the whole exposure region of the second aligner even if such an adjustment is repeated up to the previously set up times, the exposure region of the second aligner is successively limited to be narrowed so that the alignment may be made to decrease the alignment errors less than the specified value in the whole exposure region of the second aligner.
申请公布号 JPH03228309(A) 申请公布日期 1991.10.09
申请号 JP19900022269 申请日期 1990.02.02
申请人 CANON INC 发明人 SHIMODA ISAMU;KARIYA TAKUO;MIZUSAWA NOBUTOSHI;OZAWA KUNITAKA;UZAWA SHUNICHI
分类号 G03F9/00;G03F7/20;H01L21/027;H01L21/30 主分类号 G03F9/00
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