| 摘要 |
PURPOSE:To make it possible to transmit light energy without converting the light energy into heat by providing wider energy bands to a light transmitting electrode and P and N layers in comparison with an I layer not only on the light irradiation surface side but also on the rear side. CONSTITUTION:The energy band width of a P- or N-type semiconductor layer 22 on a surface irradiated with light is made wider than the band width of an I-type semiconductor layer (I layer) 20. Light is transmitted through the I layer 20. A window effect is provided in an N- or P-type semiconductor layer 23 which is provided on the rear surface. The energy band width of the layer 23 is also made wider than the I layer 20. An electrode 16 on the side of the surface irradiated with the light is made to have light transmitting property. In addition, an electrode 19 which is provided on the rear surface of the semiconductor is also made to be a light transmitting electrode. In this way, only photoelectric conversion is performed, and the energy source such as light and infrared rays which can undergo light-heat conversion and generate heat can be made to pass in an intact state. |
