Semiconductor lasers.

摘要

A semiconductor laser is formed into a double hereto junction structure comprising an n-type cladding layer (3) and a p-type cladding layer (5) with an active layer (4) interposed therebetween. The p-type cladding layer (5) has a laminated structure consisting of a first cladding layer (51) of (AlxGa1-x)InP disposed on one side adjacent to the active layer (4) and a second cladding layer (52) of AlyGa1-yAs disposed on the reverse side. A deterioration preventive layer (11) of AlzGa1-yAs is included in the first cladding layer (51) at a position spaced apart from the second cladding layer (52) by a predetermined distance. In addition, the second cladding layer (52) is partially removed, and a current stricture layer (10) is formed in such removed portion.