| 摘要 |
PURPOSE:To increase the correlation between a size managing pattern and gate electrode size, and realize accurate monitoring, by arranging dummy patterns in the vicinity of the size managing pattern, and making the environment of the size managing pattern approximate to that of the gate electrode. CONSTITUTION:Dummy patterns 11, 12 are arranged in the vicinity of a size managing pattern 3a. Owing to the dummy patterns 11, 12, the environment of the pattern 3a is approximated to that of a gate electrode 3, and the correlation between the pattern width L1 of the pattern 8a and the pattern width L2 of the electrode 3 is increased. Hence the size L2 of the gate electrode 3 inside a memory cell can be accurately monitored by measuring the size L1 of the pattern 3a. |
