| 摘要 |
PURPOSE: To prevent short-circuiting between a gate electrode and source/drain electrodes, due to pin holes by a method, wherein a semiconductor layer is composed of a first semiconductor layer and a second semiconductor layer, and a semiconductor insulating layer of amorphous silicon nitride is interposed between the first semiconductor layer and the second semiconductor layer. CONSTITUTION: A thin-film transistor is equipped with a substrate 1, a gate electrode 2, a gate insulating layer 3, a semiconductor layer 4, an ohmic layer 5, a source electrode 6, and a drain electrode 7, wherein the semiconductor layer 4 is composed of a first semiconductor layer 4A and a second semiconductor layer 4B, and a semiconductor insulating layer 9 of amorphous silicon nitride (a-SiN:H) is interposed between the semiconductor layers 4A and 4B. For example, a gate insulating layer 3B of silicon oxide film is formed on the gate electrode 2, and then the first semiconductor layer 4A of amorphous silicon is evaporated. Then, a-SiN:H is Vapor-deposited as thick as 50 to 150Åor so for the formation of the semiconductor insulating layer 9, then the second semiconductor layer 4B is laminated again, and the ohmic layer 5, the source electrode 6, and the drain electrode 7 are successively formed on the semiconductor layer 4B.
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