Method of fabricating MMIC semiconductor integrated circuits using the RF and DC measurements of an active device on a substrate to design the passive elements, which are then E-beam written to the substrate

摘要

An active device such as an HEMT is formed on a GaAs substrate, and characteristics of this active device formed are measured. A circuit pattern of a passive circuit device including a serial microstrip line is simulated on the basis of the results of this measurement, and a circuit pattern obtained by the simulation is directly drawn on a substrate to form the passive circuit device, thereby to fabricate an MMIC. Accordingly, the passive circuit device is formed in conformity with the characteristics of the active device for each chip. As a result, the variation in characteristics of the active device is canceled, to obtain an MMIC superior in matching.