| 摘要 |
PURPOSE:To enable attainment of a solar cell being inexpensive and excellent in a photoconductive characteristic and a conversion efficiency by a method wherein at least one layer of a protective film having resistance to a hydrogen gas is provided between a P layer and an amorphous silicon germanium film. CONSTITUTION:At least one layer of a protective film 4 having resistance to a hydrogen gas is provided between a P layer 3 and an amorphous silicon germanium film 5. Although the composition of the protective film 4 is not limited in particular so long as it does not impair films formed on a substrate before the formation of the protective film, an alpha-Si: H film being excellent in a photoconductive characteristic is preferably employed. In this case, a pin- type solar cell having an (i) layer formed into a multilayer of the the alpha-Si: H film and an alpha-SiGe: H film is obtained. By this method, the solar cell having no impairment in the ground film and being excellent in a conversion efficiency can be obtained. |
