| 摘要 |
PURPOSE:To obtain sufficient withstand voltage by forming a layer of Si resin containing filler or reinforcing member on an Si resin containing no filler. CONSTITUTION:A semiconductor substrate 20 has a pair of main surfaces 201, 202 disposed at opposite side to each other, a side end face 203 communicating between both main surfaces, and 4 continuous layers of pE, nS, pB, nE formed on the main surface. A layer 23 of additional Si resin containing no filler or reinforcing member is formed on the side face 203, and a layer 24 of additional Si resin containing filler or reinforcing member is formed on the layer 23. The Si resin containing filler is remarkably affected by the influence of the moisture, and the reinforcing agent is remarkably affected by lthe influence of temperature and electric field. Therefore, two layers of the layers 23, 24 are covered and the charge is not thus varied by the moisture, temperatre and electric field, and hence desired withstand voltage characteristic can be obtained. |
