FIELD OXIDE FILM LEVELLING METHOD OF THE TOD OF THE TRENCH CAPACITOR OF MOSFET

摘要

The method for filling up the hole of the field oxide layer with different insulator comprises steps: a) forming the field oxide layer on the upper side of the trench removed the nitride layer; b) platening the field oxide layer with the dry etching method after depositing the non-doped polysilicon with CVD method; c) removing the oxide layer on the upper side of the silicon substrate after removing the nitride layer with wet etching method; d) forming the oxide layer again with certain thickness and oxidizing the residual non-doped polysilicon in the hole of the field oxide layer; and e) forming the agte oxide layer, gate electrode, and gate electrode line.