| 摘要 |
PURPOSE:To perform alignment for accurate pattern transcription by suppressing reflection of light for exposure from the steps of an element region and making it possible to securely detect reflected light for position detection from the steps of an alignment mark. CONSTITUTION:A resin layer 19 on a high-light-reflection-factor Al wiring 16 is thermally affected selectively for melanization, therefore, the resin layer 19 in that section has high light-absorptivity. Hence strong light for exposure is not applied to the surface of the Al wiring 16 and radiation of reflected light from the surface of the Al wiring 16 is suppressed. Therefore, even if the resin layer 19 which transmits light normally is used as a flattening layer, light for exposure including the reflected light is applied uniformly to a positive photoresist film 23 both on a high-light-reflection-factor region and on a lower- light-reflection-factor region. Thereby the exposure intensity of the positive photoresist film 23 can be prevented from becoming uneven and high-dimension- accuracy patterning is made possible. |
