发明名称 |
Stress reduction package and process |
摘要 |
An integrated circuit package (10) has a layer (22) of silicon positioned between copper die attach pad (18) and silicon integrated circuit die (12). The layer (22) should have a thickness of about half that of the silicon die (12). The layer (22) should also extend symmetrically beyond the die (12). Such an extension provides a horizontal surface beyond the die (12) to which thermosetting encapsulating resin (20) will adhere to produce an enhanced stress reduction effect. Vertical edges (23) of the layer (22) also help to prevent stress of the die (12) by resisting force from the encapsulating resin (20) after it shrinks during curing. |
申请公布号 |
US5049976(A) |
申请公布日期 |
1991.09.17 |
申请号 |
US19890295595 |
申请日期 |
1989.01.10 |
申请人 |
NATIONAL SEMICONDUCTOR CORPORATION |
发明人 |
DEMMIN, JEFFREY C.;PENDSE, RAJENDRA D. |
分类号 |
H01L23/12;H01L23/28;H01L23/495 |
主分类号 |
H01L23/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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