VERFAHREN ZUR HERSTELLUNG VON STRUKTURIERTEN EPITAXIALEN SCHICHTEN AUF EINEM SUBSTRAT.

摘要

The substrate is damaged, to a depth of a few atomic layers, in the required locations by bombardment in a noble gas plasma at a pressure of 0.1-1 Pa pref. 0.2 Pa, using ions with an energy over 30 eV, pref. 100 eV. The pattern is defined using a photoresist layer. The sputter epitaxy process is pref. also carried out in a noble gas HF plasma with the elements required to be deposited present as phases with about equal sputtering rates in a target. The epitaxy is carried out at a temp. pref. above that required for epitaxial deposition and below that for polycrystalline deposition in the disturbed areas. The material deposited is pref. a single crystalline ferrimagnetic garnet and pref. has the following compsn.: (A,B)3(A,B)5O12 in which A is at least one of the group of Rare Earth element, Bi or Ca, and B is Ga, Al, Fe, Co, Ni, Mn, Ru, Ir, In and/or Sc. Preferred compsns. are Gd1.90Bi1.45Fe4.09Al0.34Ga0.22O12 and Gd1.97Bi1.04Fe4.51Ga0.22Al0.26O12. Substrate used is pref. a Ca, Mg, Zr substituted GdGa-garnet:(Gd,Ca)3(GaMgZr)5O12, and the epitaxy is carried out at a substrate temp. of about 450 deg.C.