| 摘要 |
PURPOSE:To form semiconductor electrodes and an insulating film or a semi- insulating film and semiconductor electrodes on the V-shaped surface or the rear surface of a semiconductor by providing the insulating or semi-insulating film having a film thickness that can allow a tunnel current to flow and the first semiconductor electrodes to the V-shaped surface of the semiconductor, and then, the second electrodes, the polarity of which is opposite to that of the first electrodes, separately from the first electrodes. CONSTITUTION:Insulating or semi-insulating films 6 and 12 are respectively formed on both surfaces of a semiconductor 1 to film thicknesses of <=100Angstrom , desirably 15-31Angstrom , which can allow a tunnel current to flow. For example, Si3N4 is used for the insulating film and Si3N4-x is used for the semi-insulating film. After the insulating or semi-insulating films are formed on both surfaces of the semiconductor 1, the first electrodes 2 and second electrodes 4, the polarity of which is opposite to that of the electrodes 2, are formed at intervals on the upper surface only. The first and second electrodes 2 and 4 are not made of metals, but of the semiconductor 1 of P<+> or N conductivity type formed to thicknesses of 1,000-5,000Angstrom . |
