发明名称 |
Method of forming isolation trenches in a semiconductor substrate. |
摘要 |
<p>In a semiconductor substrate, a method of forming a shallow isolation trench having a doped sidewall is disclosed. A shallow trench having nearly vertical walls is formed in the semiconductor substrate. A doped silicon layer is selectively grown on a sidewall and a portion of the bottom of the trench. The dopant from the silicon layer is then driven into the substrate by a suitable method such as annealing. The trench is subsequently filled with a dielectric material. <IMAGE></p> |
申请公布号 |
EP0445471(A2) |
申请公布日期 |
1991.09.11 |
申请号 |
EP19900314002 |
申请日期 |
1990.12.20 |
申请人 |
DIGITAL EQUIPMENT CORPORATION |
发明人 |
GRULA, GREGORY J.;METZ, WALTER C. |
分类号 |
H01L21/76;H01L21/225;H01L21/762;H01L21/8238;H01L27/08 |
主分类号 |
H01L21/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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