| 摘要 |
<p>A method of producing a semiconductor device which comprises a CMOS circuit including at least an N-channel MOS transistor and a P-channel MOS transistor, includes the steps of forming an isolation region (2), a P-channel MOS transistor region (3) and an N-channel MOS transistor region (4) in a semiconductor substrate (1), where the P-channel MOS transistor region has an N-type well (5) in the semiconductor substrate and the N-channel MOS transistor region has a P-type well (6) in the semiconductor substrate, successively forming a first insulator layer (7) and a first conductor layer (8) on the semiconductor substrate so as to cover the N-channel MOS transistor region, forming a first gate electrode (8a) and a first gate insulator layer (7a) of the N-channel MOS transistor on the P-type well in the N-channel MOS transistor region by selectively etching the first conductor layer and the first insulator layer, successively forming a second insulator layer (13) and a second conductor layer (14) on the semiconductor substrate so as to cover at least the P-channel MOS transistor region, and forming a second gate electrode (15) and a second gate insulator layer (17) of the P-channel MOS transistor on the N-type well in the P-channel MOS transistor region by selectively etching the second conductor layer and the second insulator layer. <IMAGE></p> |
