| 摘要 |
<p>PURPOSE:To eliminate etching removal of an insulating film on a scribing line before dicing and to obviate damage of an integrated circuit completed by etching and danger of etching a necessary protective layer by exposing the surface of a semiconductor substrate of a scribing line corresponding part and directly forming an SiO2 film thereon. CONSTITUTION:If a semiconductor device is manufactured by using a semiconductor wafer, a semiconductor substrate 10 of a scribing line corresponding part A on the wafer is exposed, and a silicon oxide film 13 is formed in close contact with the exposed part A. For example, the GaAs substrate 10 covered on a circuit element C with an SiN film 11 is covered with photoresist 12 except the part A, and the film 11 is removed on the part A by plasma etching. Then, the photoresist 12 is removed, and the film 13 is deposited on the entire surface by using a plasma CVD method or the like. Thereafter, various steps are executed, the scribing line of the wafer on which an insulating film 14 made of an SiN film or the like is deposited on the film 13 is cut by a dicing saw.</p> |
